JAVIER
OLEA ARIZA
Profesor titular de universidad
Publicaciones (72) Publicaciones en las que ha participado algún/a investigador/a
2023
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Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
Semiconductor Science and Technology, Vol. 38, Núm. 3
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Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells
2023 14th Spanish Conference on Electron Devices (CDE)
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High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2Atmospheres for Hole Selective Contacts in Photovoltaic Cells
2023 14th Spanish Conference on Electron Devices (CDE)
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High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
Materials Science in Semiconductor Processing, Vol. 153
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Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells
IEEE Journal of Photovoltaics, Vol. 13, Núm. 5, pp. 656-662
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Ti supersaturated Si by microwave annealing processes
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Transport mechanisms in hyperdoped silicon solar cells
Semiconductor Science and Technology, Vol. 38, Núm. 12
2022
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Electrical transport properties in Ge hyperdoped with Te
Semiconductor Science and Technology, Vol. 37, Núm. 12
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Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells
Materials Science in Semiconductor Processing, Vol. 137
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On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes
Advanced Electronic Materials, Vol. 8, Núm. 2
2021
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High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
2020
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AlxIn1-xN on Si (100) Solar Cells (x = 0-0.56) deposited by RF sputtering
Materials, Vol. 13, Núm. 10
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Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering
Physica Status Solidi (B) Basic Research, Vol. 257, Núm. 4
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On the properties of GaP supersaturated with Ti
Journal of Alloys and Compounds, Vol. 820
2019
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High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering
Materials Science in Semiconductor Processing, Vol. 100, pp. 8-14
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Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering
Physica Status Solidi (A) Applications and Materials Science, Vol. 216, Núm. 1
2018
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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
AIP Advances, Vol. 8, Núm. 11
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Strong subbandgap photoconductivity in GaP implanted with Ti
Progress in Photovoltaics: Research and Applications, Vol. 26, Núm. 3, pp. 214-222