Física de Materiales
Departamento
University of Montpellier
Montpellier, FranciaPublicaciones en colaboración con investigadores/as de University of Montpellier (19)
2022
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Ferromagnetic Quasi-Two-Dimensional Electron Gas with Trigonal Crystal Field Splitting
ACS Applied Electronic Materials, Vol. 4, Núm. 7, pp. 3226-3231
2019
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Apparent auxetic to non-auxetic crossover driven by Co2+ redistribution in CoFe2O4 thin films
APL Materials, Vol. 7, Núm. 3
2017
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Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3– δ Films on Silicon
Small, Vol. 13, Núm. 39
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Hysteretic Critical State in Coplanar Josephson Junction with Monolayer Graphene Barrier
Journal of Superconductivity and Novel Magnetism, Vol. 30, Núm. 1, pp. 5-14
2008
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The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE
Journal of Crystal Growth, Vol. 310, Núm. 18, pp. 4069-4072
2006
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped
GAN, AIN, INN AND RELATED MATERIALS
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
Materials Research Society Symposium Proceedings
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Characterization of the blue emission of Tm/Er co-implanted GaN
Materials Research Society Symposium Proceedings
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Characterization of the blue emission of Tm/Er co-implanted GaN
GAN, AIN, INN AND RELATED MATERIALS
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Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing
Applied Physics Letters, Vol. 88, Núm. 3, pp. 1-3
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High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Optical Materials
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Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation
Optical Materials
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Optical properties of high-temperature annealed Eu-implanted GaN
Optical Materials
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UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layers
Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 440-444
2005
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Selectively excited photoluminescence from Eu-implanted GaN
Applied Physics Letters, Vol. 87, Núm. 11
1994
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SLOW QUANTUM OSCILLATIONS IN THE SEMIMETALLIC SPIN-DENSITY-WAVE STATE OF TETRAMETHYLTETRASELENAFULVALINIUM NITRATE (TMTSF)(2)NO3
PHYSICAL REVIEW B, Vol. 50, Núm. 17, pp. 12721-12725
1993
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Anomalous magnetoresistance in the spin density wave state of tetramethyltetraselenafulvalinium nitrate, (Tmtsf)2n03: Imperfect-nesting effects
EPL, Vol. 22, Núm. 4, pp. 279-285
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MAGNETIC-FIELD DEPENDENCE OF THE PHASE-COHERENCE LENGTH IN THE SPIN-DENSITY-WAVE STATE OF TETRAMETHYLTETRASELENAFULVALINIUM NITRATE, (TMTSF)2NO3
PHYSICAL REVIEW B
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MAGNETIC-FIELD INFLUENCE ON THE SPIN-DENSITY-WAVE OF THE ORGANIC CONDUCTOR (TMTSF)2NO3
JOURNAL DE PHYSIQUE IV, Vol. 3, Núm. C2, pp. 293-298