Ciencias Físicas
Facultad
National Institute for Materials Science
Tsukuba, JapónPublicaciones en colaboración con investigadores/as de National Institute for Materials Science (11)
2022
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Unexpectedly Large Contribution of Oxygen to Charge Compensation Triggered by Structural Disordering: Detailed Experimental and Theoretical Study on a Li3NbO4−NiO Binary System
ACS Central Science, Vol. 8, Núm. 6, pp. 775-794
2019
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Micro-opto-electro-mechanical device based on flexible β-Ga2O3 micro-lamellas
ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3235-Q3241
2017
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Doping β-Ga2O3 with europium: Influence of the implantation and annealing temperature
Journal of Physics D: Applied Physics, Vol. 50, Núm. 32
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Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires
Journal of Luminescence, Vol. 191, pp. 56-60
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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
ACS Nano, Vol. 11, Núm. 11, pp. 11206-11216
2014
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Doping of Ga2O3 bulk crystals and NWs by ion implantation
Proceedings of SPIE - The International Society for Optical Engineering
2004
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Electronic structure of nanostructured ZnO from x-ray absorption and emission spectroscopy and the local density approximation
Physical Review B - Condensed Matter and Materials Physics, Vol. 70, Núm. 19, pp. 1-5
2003
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Nanoscale structure/property correlation through aberration-corrected stem and theory
Materials Research Society Symposium - Proceedings
2002
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Cathodoluminescence and scanning tunnelling spectroscopy of ZnO single crystals
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2001
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Cathodoluminescence microscopy of hydrothermal and flux grown ZnO single crystals
Journal of Physics D: Applied Physics, Vol. 34, Núm. 19, pp. 2945-2949
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Scanning tunnelling spectroscopy characterization of ZnO single crystals
Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 589-593