Publicaciones en colaboración con investigadores/as de Interuniversity Microelectronics Centre (22)

2024

  1. Improving the Representativeness of Simulation Intervals for the Cache Memory System

    IEEE Access, Vol. 12, pp. 5973-5985

2014

  1. Improving the design flow for parallel and heterogeneous architectures running real-time applications: The PHARAON FP7 project

    Microprocessors and Microsystems, Vol. 38, Núm. 8, pp. 960-975

2012

  1. Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs

    IEEE Transactions on Device and Materials Reliability, Vol. 12, Núm. 1, pp. 166-170

2011

  1. Positive bias temperature instabilities on sub-nanometer EOT FinFETs

    Microelectronics Reliability

2008

  1. Efficiently scheduling runtime reconfigurations

    ACM Transactions on Design Automation of Electronic Systems, Vol. 13, Núm. 4

  2. New developments in charge pumping measurements on thin stacked dielectrics

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 11, pp. 3184-3191

  3. Reliability of strained-Si devices with post-oxide-deposition strain introduction

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 12, pp. 3432-3441

2007

  1. A reliable metric for mobility extraction of short-channel MOSFETs

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 10, pp. 2690-2698

  2. Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 7, pp. 1705-1712

  3. Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

    Microelectronic Engineering, Vol. 84, Núm. 9-10, pp. 1943-1946

  4. High-κ characterization by RFCV

    ECS Transactions

  5. Line width dependent mobility in high-k - A comparative performance study between FUSI and TiN

    International Symposium on VLSI Technology, Systems, and Applications, Proceedings

  6. Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN

    Microelectronic Engineering, Vol. 84, Núm. 9-10, pp. 1878-1881

  7. Negligible effect of process-induced strain on intrinsic NBTI behavior

    IEEE Electron Device Letters, Vol. 28, Núm. 3, pp. 242-244

  8. Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?

    Microelectronic Engineering, Vol. 84, Núm. 9-10, pp. 2058-2062

2006

  1. NBTI study on PMOS devices with TiN/HfO2 gate stack and process induced strain

    ECS Transactions

  2. Optimization of sub-melt laser anneal: Performance and reliability

    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2

  3. RF split capacitance-voltage measurements of short-channel and leaky MOSFET devices

    IEEE Electron Device Letters, Vol. 27, Núm. 9, pp. 772-774

2005

  1. Energy characterization of garbage collectors for dynamic applications on embedded systems

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  2. Improving superword level parallelism support in modern compilers

    CODES+ISSS 2005 - International Conference on Hardware/Software Codesign and System Synthesis