Publicaciones en las que colabora con MARÍA LUISA LUCÍA MULAS (19)

2014

  1. High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?

    ECS Transactions

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  4. Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  5. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering

2010

  1. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

  2. Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

    Journal of the Electrochemical Society, Vol. 157, Núm. 4

  3. Nitridation of Si by N[sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO[sub x] Deposition

    Journal of The Electrochemical Society, Vol. 157, Núm. 4

  4. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

    Journal of Applied Physics, Vol. 107, Núm. 8

2009

  1. Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Interfacial properties of HfO2/SiN/Si gate structures

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

  2. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

    Applied Physics Letters, Vol. 91, Núm. 19

2000

  1. Critical temperature depression and persistent photoconductivity in ion irradiated YBa2Cu3O7-x films and YBa2Cu3O7-x/PrBa2Cu 3O7 superlattices

    Applied Physics Letters, Vol. 76, Núm. 22, pp. 3289-3291

1999

  1. Disorder and damage effects in SrRuO3 thin films

    Physica B: Condensed Matter, Vol. 259-261, pp. 938-939

  2. Intracell changes in epitaxially strained YBa2Cu3O7-x ultrathin layers in YBa2Cu3O7-x/PrBa2Cu3O7 superlattices

    Physical Review Letters, Vol. 83, Núm. 19, pp. 3936-3939

1998

  1. Crecimiento epitaxial de superconductores de alta temperatura crítica por pulverización catódica II: multicapas YBa2Cu3O7-x/PrBa2Cu3O7-x

    Revista española de física, Vol. 12, Núm. 2, pp. 28-32

  2. Metal-insulator transition in SrRuO3 induced by ion irradiation

    Applied Physics Letters, Vol. 73, Núm. 23, pp. 3375-3377