Publicaciones en las que colabora con Pedro Carlos Feijoo Guerrero (13)

2014

  1. High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?

    ECS Transactions

2013

  1. High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

  2. Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  4. Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  5. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering

2010

  1. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

  2. Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

    Journal of the Electrochemical Society, Vol. 157, Núm. 4

  3. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

    Journal of Applied Physics, Vol. 107, Núm. 8

2009

  1. Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Interfacial properties of HfO2/SiN/Si gate structures

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09