Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

  1. Plaza, J.L.
  2. Hidalgo, P.
  3. Mendez, B.
  4. Piqueras, J.
  5. Dieguez, E.
Revista:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Ano de publicación: 2002

Volume: 91-92

Páxinas: 529-533

Tipo: Achega congreso

DOI: 10.1016/S0921-5107(01)01065-0 GOOGLE SCHOLAR
Fonte de datos: Scopus