Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Del Prado, Á.
  5. Mártil, I.
  6. González-Díaz, G.
Zeitschrift:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN: 0021-4922

Datum der Publikation: 2003

Ausgabe: 42

Nummer: 8

Seiten: 4978-4981

Art: Artikel