Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

  1. San Andrés, E.
  2. Del Prado, A.
  3. Mártil, I.
  4. González-Díaz, G.
  5. Martínez, F.L.
Revue:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

ISSN: 1071-1023

Année de publication: 2003

Volumen: 21

Número: 4

Pages: 1306-1313

Type: Communication dans un congrès

DOI: 10.1116/1.1585067 GOOGLE SCHOLAR
La source de données: Scopus