Two-layer Hall effect model for intermediate band Ti-implanted silicon

  1. Olea, J.
  2. González-Díaz, G.
  3. Pastor, D.
  4. Mártil, I.
  5. Martí, A.
  6. Antolín, E.
  7. Luque, A.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2011

Alea: 109

Zenbakia: 6

Mota: Artikulua

DOI: 10.1063/1.3561374 GOOGLE SCHOLAR