Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

  1. Hernández, S.
  2. Cuscó, R.
  3. Blanco, N.
  4. González-Díaz, G.
  5. Artús, L.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2003

Volume: 93

Issue: 5

Pages: 2659-2662

Type: Article

DOI: 10.1063/1.1542659 GOOGLE SCHOLAR
Data source: Scopus