Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs schottky diode interfaces

  1. Miranda, J.M.
  2. Lin, C.-I.
  3. Brandt, M.
  4. Rodríguez-Gironés, M.
  5. Hartnagel, H.L.
  6. Sebastián, J.L.
Revue:
IEEE Electron Device Letters

ISSN: 0741-3106

Année de publication: 2000

Volumen: 21

Número: 11

Pages: 515-517

Type: Article

DOI: 10.1109/55.877194 GOOGLE SCHOLAR
La source de données: Scopus