Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

  1. Gao, Z.
  2. Romero, M.F.
  3. Redondo-Cubero, A.
  4. Pampillon, M.A.
  5. San Andres, E.
  6. Calle, F.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2017

Volume: 38

Issue: 5

Pages: 611-614

Type: Article

DOI: 10.1109/LED.2017.2682795 GOOGLE SCHOLAR
Data source: Scopus