High- k gate stacks on low bandgap tensile strained ge and gesn alloys for field-effect transistors

1. Wirths, S.
2. Stange, D.
3. Pampillón, M.-A.
4. Tiedemann, A.T.
5. Mussler, G.
6. Fox, A.
7. Breuer, U.
8. Baert, B.
9. San Andrés, E.
10. Nguyen, N.D.
11. Hartmann, J.-M.
12. Ikonic, Z.
13. Mantl, S.
14. Buca, D.