Reliability of strained-Si devices with post-oxide-deposition strain introduction

1. Shickova, A.
2. Verheyen, P.
3. Eneman, G.
4. Degraeve, R.
5. Simoen, E.
6. Favia, P.
7. Klenov, D.O.
8. San Andres, E.
9. Kaczer, B.
10. Jurczak, M.
11. Absil, P.
12. Maes, H.E.
13. Groeseneken, G.