Uniform low-to-high in composition InGaN layers grown on Si

  1. Aseev, P.
  2. Rodriguez, P.E.D.S.
  3. Kumar, P.
  4. Gómez, V.J.
  5. Alvi, N.U.H.
  6. Mánuel, J.M.
  7. Morales, F.M.
  8. Jiménez, J.J.
  9. García, R.
  10. Calleja, E.
  11. Nötzel, R.
Journal:
Applied Physics Express

ISSN: 1882-0778 1882-0786

Year of publication: 2013

Volume: 6

Issue: 11

Type: Article

DOI: 10.7567/APEX.6.115503 GOOGLE SCHOLAR