Theoretical approach to point defects in a single transition metal dichalcogenide monolayer: Conductance and force calculations inMoS2

  1. González, C.
  2. Dappe, Y.J.
Aldizkaria:
Comptes Rendus Physique

ISSN: 1878-1535,  1631-0705

Argitalpen urtea: 2021

Alea: 22

Orrialdeak: 1-19

Mota: Artikulua

DOI: 10.5802/CRPHYS.72 GOOGLE SCHOLAR lock_openSarbide irekia editor
Datuen iturria: Scopus