Erratum: Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities (ACS Nano (2017) 11:11 (11206-11216) DOI: 10.1021/acsnano.7b05520)
- Dubey, S.
- Lisi, S.
- Nayak, G.
- Herziger, F.
- Nguyen, V.-D.
- Le Quang, T.
- Cherkez, V.
- González, C.
- Dappe, Y.J.
- Watanabe, K.
- Taniguchi, T.
- Magaud, L.
- Mallet, P.
- Veuillen, J.-Y.
- Arenal, R.
- Marty, L.
- Renard, J.
- Bendiab, N.
- Coraux, J.
- Bouchiat, V.
ISSN: 1936-086X, 1936-0851
Argitalpen urtea: 2018
Alea: 12
Zenbakia: 10
Orrialdeak: 10565-10566
Mota: Hutsen zuzenketa