Low-to-Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio-Frequency Sputtering

  1. Blasco, R.
  2. Valdueza-Felip, S.
  3. Montero, D.
  4. Sun, M.
  5. Olea, J.
  6. Naranjo, F.B.
Revue:
Physica Status Solidi (B) Basic Research

ISSN: 1521-3951 0370-1972

Année de publication: 2020

Volumen: 257

Número: 4

Type: Article

DOI: 10.1002/PSSB.201900575 GOOGLE SCHOLAR

Objectifs de Développement Durable