High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

  1. Núñez-Cascajero, A.
  2. Blasco, R.
  3. Valdueza-Felip, S.
  4. Montero, D.
  5. Olea, J.
  6. Naranjo, F.B.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 2019

Alea: 100

Orrialdeak: 8-14

Mota: Artikulua

DOI: 10.1016/J.MSSP.2019.04.029 GOOGLE SCHOLAR