Synthesis of Ge1-xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

  1. Tran, T.T.
  2. Pastor, D.
  3. Gandhi, H.H.
  4. Smillie, L.A.
  5. Akey, A.J.
  6. Aziz, M.J.
  7. Williams, J.S.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550 0021-8979

Argitalpen urtea: 2016

Alea: 119

Zenbakia: 18

Mota: Artikulua

DOI: 10.1063/1.4948960 GOOGLE SCHOLAR