Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
- E. Garcia-Hemme 1
- A. del Prado 1
- P. Wahnon 1
- R. Garcia-Hernansanz 1
- J. Olea 1
- D. Pastor 1
- G. Gonzalez-Diaz 1
- I. Martil 1
- 1 Univ. Politécnica de Madrid
- Héctor García
- Helena Castán
Editorial: Universidad de Valladolid
ISBN: 9781467346665
Any de publicació: 2013
Tipus: Capítol de llibre
Resum
We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.