Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

  1. R. Garcia-Hemansanz
  2. E. Garcia-Hemme
  3. D. Pastor
  4. A. del Prado
  5. I. Martil
  6. G. Gonzalez-Diaz
  7. J. Olea
  8. F.J. Ferrer
Libro:
Proceedings of the 2013 Spanish Conference on Electron Devices
  1. Héctor García
  2. Helena Castán

Editorial: Universidad de Valladolid

ISBN: 9781467346665

Año de publicación: 2013

Tipo: Capítulo de Libro

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Resumen

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF -power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

Fuente de los datos: Dialnet