Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
- R. Garcia-Hemansanz
- E. Garcia-Hemme
- D. Pastor
- A. del Prado
- I. Martil
- G. Gonzalez-Diaz
- J. Olea
- F.J. Ferrer
- Héctor García
- Helena Castán
Editorial: Universidad de Valladolid
ISBN: 9781467346665
Año de publicación: 2013
Tipo: Capítulo de Libro
Resumen
Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF -power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.