Exchange bias coupling and bipolar resistive switching at room temperature on GaSb/Mn multilayers for resistive memories applications

  1. Calderón, J.A.
  2. Quiroz, H.P.
  3. Terán, C.L.
  4. Manso-Silván, M.
  5. Dussan, A.
  6. Muñoz Noval, Á.
Zeitschrift:
Scientific Reports

ISSN: 2045-2322

Datum der Publikation: 2023

Ausgabe: 13

Nummer: 1

Art: Artikel

DOI: 10.1038/S41598-022-27371-9 GOOGLE SCHOLAR lock_openOpen Access editor