Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells

  1. Zenteno, Francisco José Pérez
  2. Serrano, Enrique San Andrés 12
  3. Hemme, Eric García 12
  4. Gutiérrez, Daniel Caudevilla 12
  5. Cano, Sebastian Duarte
  6. García-Hernansanz, Rodrigo 12
  7. Algaidy, Sari
  8. Ariza, Javier Olea 12
  9. Pastor, David Pastor 12
  10. del Prado, Álvaro 12
  1. 1 Universidad Complutense de Madrid
    info

    Universidad Complutense de Madrid

    Madrid, España

    ROR 02p0gd045

  2. 2 Departamento de Estructura de la Materia, Física Térmica y Electrónica
Actas:
2023 14th Spanish Conference on Electron Devices (CDE)

Año de publicación: 2023

Congreso: 2023 14th Spanish Conference on Electron Devices (CDE), 6-8 June 2023

Tipo: Aportación congreso

DOI: 10.1109/CDE58627.2023.10339432 GOOGLE SCHOLAR lock_openDocta Complutense editor

Objetivos de desarrollo sostenible

Resumen

In this work we have studied the behavior of TiO x growth by the unconventional technique of High-Pressure Sputtering (HPS) as an electron selective contact (ESC). This technique shows promising aspects for low-damage and low-temperature deposition, which are relevant criteria for the fabrication of heterojunction solar cells. We explored the deposition of TiO x with a 2-step process. First a thin Ti film is deposited in an Ar atmosphere, immediately the film is oxidized with the aid of an Ar/O 2 plasma at a relatively low temperature (150°C or 200°C). We analyzed the deposited films with XPS, FTIR and TEM measurements. Finally, Cox & Strack (C&S) structures were fabricated to obtain the specific contact resistance of TiOx/c-Si, with this data we compared different deposition processes.

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