High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2Atmospheres for Hole Selective Contacts in Photovoltaic Cells

  1. Zenteno, Francisco José Pérez
  2. Serrano, Enrique San Andrés 12
  3. Hemme, Eric García 12
  4. Torres, Ignacio 3
  5. Barrio, Rocío 3
  6. Gutiérrez, Daniel Caudevilla 12
  7. Cano, Sebastian Duarte
  8. García-Hernansanz, Rodrigo 12
  9. Ariza, Javier Olea 12
  10. Pastor, David Pastor 12
  11. Del Prado, Alvaro 12
  1. 1 Universidad Complutense de Madrid
    info

    Universidad Complutense de Madrid

    Madrid, España

    ROR 02p0gd045

  2. 2 Departamento de Estructura de la Materia, Física Térmica y Electrónica
  3. 3 Unidad de Energía Solar Fotovoltaica, CIEMAT, Madrid, Spain
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Actas:
2023 14th Spanish Conference on Electron Devices (CDE)

Editorial: IEEE

Año de publicación: 2023

Congreso: 2023 14th Spanish Conference on Electron Devices (CDE), 6-8 June 2023

Tipo: Aportación congreso

DOI: 10.1109/CDE58627.2023.10339461 GOOGLE SCHOLAR lock_openDocta Complutense editor

Resumen

We have deposited thin films of MoO x using high-pressure sputtering (HPS) and Ar/O 2 /H 2 atmospheres aiming at the compositional and interface control. We found that H2 impacts plasma composition, which in turn produces a reduction of the oxygen content and a change in the refractive index of the films. However, the presence of hydrogen in the plasma atmosphere enhances interfacial SiO x regrowth, as FTIR shows. TEM measurements show that this regrowth is not critical for thin films. Also, increasing the hydrogen ratio produces a change from amorphous to an amorphous/polycrystalline mixture. Lifetime measurements show that these films are adequate for their integration into test HIT -like structures, but require more work to produce competitive iVoc values.

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