Grupo de magnetismo aplicado y nanoestructuras magnéticas
MAGAPNA
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Universidad de Granada
Granada, EspañaPublicacións en colaboración con investigadores/as de Universidad de Granada (13)
2018
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Forces and electronic transport in a contact formed by a graphene tip and a defective MoS2 monolayer: A theoretical study
Nanotechnology, Vol. 29, Núm. 22
2017
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Adsorption of small inorganic molecules on a defective MoS2 monolayer
Physical Chemistry Chemical Physics, Vol. 19, Núm. 14, pp. 9485-9499
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Angle dependence of the local electronic properties of the graphene/MoS2 interface determined by ab initio calculations
Journal of Physics D: Applied Physics, Vol. 50, Núm. 17
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Influence of grain boundaries on the radiation-induced defects and hydrogen in nanostructured and coarse-grained tungsten
Acta Materialia, Vol. 122, pp. 277-286
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Molecular detection on a defective MoS2 monolayer by simultaneous conductance and force simulations
Physical Review B, Vol. 95, Núm. 21
2016
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Ab initio simulations of the structure, energetics and mobility of radiation-induced point defects in bcc Nb
Journal of Nuclear Materials, Vol. 478, pp. 185-196
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Ab initio study of tungsten defects near the surface
Modelling and Simulation in Materials Science and Engineering, Vol. 24, Núm. 4
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Energetic analysis of He and monovacancies in Cu/W metallic interfaces
Materials and Design, Vol. 91, pp. 171-179
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Graphene as a Promising Electrode for Low-Current Attenuation in Nonsymmetric Molecular Junctions
Nano Letters, Vol. 16, Núm. 10, pp. 6534-6540
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Reactivity enhancement and fingerprints of point defects on a MoS2 monolayer assessed by ab initio atomic force microscopy
Journal of Physical Chemistry C, Vol. 120, Núm. 30, pp. 17115-17126
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Signals of strong electronic correlation in ion scattering processes
Physical Review B, Vol. 93, Núm. 19
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Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy
Nanotechnology, Vol. 27, Núm. 10
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Theoretical study of carbon-based tips for scanning tunnelling microscopy
Nanotechnology, Vol. 27, Núm. 10