Física de nanomateriales electrónicos
Rensselaer Polytechnic Institute
Troy, Estados UnidosPublicaciones en colaboración con investigadores/as de Rensselaer Polytechnic Institute (6)
2001
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Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 125-129
2000
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Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy
Materials Research Society Symposium - Proceedings
1999
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Effect of In doping in GaSb crystals studied by cathodoluminescence
Semiconductor Science and Technology, Vol. 14, Núm. 10, pp. 901-904
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Scanning tunneling spectroscopy of transition-metal-doped gasb
Physical Review B - Condensed Matter and Materials Physics, Vol. 60, Núm. 15, pp. 10613-10615
1998
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Decoration of extended defects in GaSb by A1 doping as evidenced by cathodoluminescence studies
Solid State Communications, Vol. 108, Núm. 12, pp. 997-1000
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Luminescence properties of transition-metal-doped GaSb
Physical Review B - Condensed Matter and Materials Physics, Vol. 57, Núm. 11, pp. 6479-6484