Publicaciones en las que colabora con MARÍA BIANCHI MÉNDEZ MARTÍN (18)

2023

  1. The fundamental properties of energy-technology-related nanomaterials

    Sustainable Nanomaterials for Energy Applications (Institute of Physics Publishing), pp. 3

1995

  1. Fibonacci superlattices of narrow-gap III-V semiconductors

    Semiconductor Science and Technology, Vol. 10, Núm. 6, pp. 797-802

1994

  1. A relativistic equation for a slowly varying potential

    Journal of Physics A: General Physics, Vol. 27, Núm. 10, pp. 3539-3546

  2. Electronic structure of Fibonacci Si δ-doped GaAs

    Physics Letters A, Vol. 194, Núm. 3, pp. 184-190

  3. Electronic structure of Si delta -doped GaAs in an electric field

    Semiconductor Science and Technology, Vol. 9, Núm. 3, pp. 263-271

  4. Exact Solutions of Two‐Band Models of Graded‐Gap Superlattices

    physica status solidi (b), Vol. 184, Núm. 2, pp. K53-K56

  5. Exciton trapping in one-dimensional systems with correlated disorder

    Physical Review B, Vol. 49, Núm. 6, pp. 3839-3843

  6. Sawtooth superlattices in a two-band semiconductor

    Semiconductor Science and Technology, Vol. 9, Núm. 7, pp. 1358-1362

  7. Stark ladders in periodically Si-δ-doped GaAs

    Physical Review B, Vol. 49, Núm. 16, pp. 11471-11474

1993

  1. A transfer matrix method for the determination of one-dimensional band structures

    Journal of Physics A: General Physics, Vol. 26, Núm. 1, pp. 171-177

1992

  1. Level shift under the influence of relativistic point interaction potentials

    Journal of Physics A: General Physics, Vol. 25, Núm. 7, pp. 2065-2070

  2. Relativistic particles in orthogonal electric and magnetic fields with confining scalar potentials

    Il Nuovo Cimento B Series 11, Vol. 107, Núm. 5, pp. 489-495

1991

  1. A simple numerical method for the determination of relativistic one-dimensional band structures

    Journal of Physics A: General Physics, Vol. 24, Núm. 7

  2. Non-local separable potential approach to multicentre interactions

    Molecular Physics, Vol. 74, Núm. 5, pp. 1065-1069

1988

  1. SEM‐CL of reaction bonded SiC

    physica status solidi (a), Vol. 108, Núm. 1, pp. K81-K84

  2. Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence

    Journal of Applied Physics, Vol. 64, Núm. 9, pp. 4466-4468