Publicacións en colaboración con investigadores/as de Universidad Autónoma de Madrid (14)

2008

  1. Shape-controlled synthesis and cathodoluminescence properties of elongated α -Fe2O3 nanostructures

    Journal of Applied Physics, Vol. 104, Núm. 12

2007

  1. Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals

    Journal of Physics D: Applied Physics

  2. Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys

    AIP Conference Proceedings

  3. Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys

    Thermophotovoltaic Generation of Electricity

2006

  1. Characterization of undoped and Te-doped GaSb crystals grown by the vertical feeding method

    Journal of Crystal Growth, Vol. 289, Núm. 1, pp. 18-23

  2. Solidification features of cast and vertically fed Te-doped GaSb materials

    Journal of Crystal Growth, Vol. 293, Núm. 2, pp. 285-290

2005

  1. Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

    Journal of Applied Physics, Vol. 97, Núm. 2

  2. Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching

    Applied Physics Letters, Vol. 86, Núm. 22, pp. 1-3

  3. Study of defects in InxGa1-xSb bulk crystals

    Physica Status Solidi C: Conferences

2004

  1. Cathodoluminescence characterization of InGaSb crystals

    Proceedings of the International Conference on Microelectronics

  2. Cathodoluminescence study of InxGa1-xSb crystals grown by the Bridgman method

    Journal of Crystal Growth, Vol. 268, Núm. 1-2, pp. 52-58

  3. Electron-beam-induced current study of electrically active defects in 4H-SiC

    Journal of Physics Condensed Matter

2003

  1. Defect assessment of Mg-doped GaN by beam injection techniques

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7470-7475

1996

  1. Homogeneity assessment of YBa2Cu3O7-x single crystals by cathodoluminescence microscopy

    Journal of Applied Physics, Vol. 80, Núm. 2, pp. 998-1001