Publicaciones en colaboración con investigadores/as de Universidad Autónoma de Madrid (19)

2018

  1. Correlative Study of Vibrational and Luminescence Properties of Zn2GeO4 Microrods

    Physica Status Solidi (A) Applications and Materials Science, Vol. 215, Núm. 19

  2. Size-selective breaking of the core-shell structure of gallium nanoparticles

    Nanotechnology, Vol. 29, Núm. 35

2005

  1. Cathodoluminescence study of ytterbium doped GaSb

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 121, Núm. 1-2, pp. 108-111

2002

  1. Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals

    Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13211-13215

  2. Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

    Journal of Crystal Growth, Vol. 241, Núm. 3, pp. 283-288

  3. Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2001

  1. Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 81, Núm. 1-3, pp. 157-160

2000

  1. Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 71, Núm. 1-3, pp. 282-287

1999

  1. Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

    Journal of Crystal Growth, Vol. 198-199, Núm. PART I, pp. 379-383

  2. Effect of In doping in GaSb crystals studied by cathodoluminescence

    Semiconductor Science and Technology, Vol. 14, Núm. 10, pp. 901-904

  3. Scanning tunneling spectroscopy of transition-metal-doped gasb

    Physical Review B - Condensed Matter and Materials Physics, Vol. 60, Núm. 15, pp. 10613-10615

  4. Scanning tunneling spectroscopy study of erbium doped GaSb crystals

    Journal of Applied Physics, Vol. 86, Núm. 3, pp. 1449-1451

1998

  1. Decoration of extended defects in GaSb by A1 doping as evidenced by cathodoluminescence studies

    Solid State Communications, Vol. 108, Núm. 12, pp. 997-1000

  2. Effect of erbium doping on the defect structure of GaSb crystals

    Semiconductor Science and Technology, Vol. 13, Núm. 12, pp. 1431-1433

  3. Effect of erbium on the luminescence properties of GaSb crystals

    Solid State Phenomena, Vol. 63-64, pp. 215-220

1997

  1. Influence of doping on the native acceptors of gallium antimonide

    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997

1996

  1. Cathodoluminescence microscopy of doped GaSb crystals

    Materials Science and Engineering B, Vol. 42, Núm. 1-3, pp. 38-42

  2. Nature of compensating luminescence centers in Te-diffused and -doped GaSb

    Journal of Applied Physics, Vol. 80, Núm. 2, pp. 1112-1115

1995

  1. Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide

    Applied Physics Letters, Vol. 67, Núm. 18, pp. 2648-2650