Publicaciones en las que colabora con Ernesto Diéguez (19)

2011

  1. Study of the effects of edge morphology on detector performance by leakage current and cathodoluminescence

    IEEE Transactions on Nuclear Science

2010

  1. Development of CdZnTe doped with Bi for gamma radiation detection

    CrystEngComm, Vol. 12, Núm. 2, pp. 507-510

  2. Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

    Journal of Applied Physics, Vol. 107, Núm. 9

2009

  1. Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals

    Journal of Crystal Growth, Vol. 311, Núm. 5, pp. 1264-1267

2008

  1. Cathodoluminescence study of CdTe crystals doped with Bi and Bi:Yb

    Journal of Materials Science, Vol. 43, Núm. 16, pp. 5605-5608

  2. Growth and characterization of CdTe:Ge:Yb

    Journal of Crystal Growth, Vol. 310, Núm. 7-9, pp. 2076-2079

2007

  1. Surface characterisation and cathodoluminescent response of nanodot-patterned GaSb surfaces by low energy ion sputtering

    Journal of Physics: Conference Series, Vol. 61, Núm. 1, pp. 942-948

2005

  1. Cathodoluminescence study of ytterbium doped GaSb

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 121, Núm. 1-2, pp. 108-111

2002

  1. Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals

    Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13211-13215

  2. Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

    Journal of Crystal Growth, Vol. 241, Núm. 3, pp. 283-288

  3. Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2001

  1. Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 81, Núm. 1-3, pp. 157-160

2000

  1. Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 71, Núm. 1-3, pp. 282-287

1999

  1. Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

    Journal of Crystal Growth, Vol. 198-199, Núm. PART I, pp. 379-383

  2. Effect of In doping in GaSb crystals studied by cathodoluminescence

    Semiconductor Science and Technology, Vol. 14, Núm. 10, pp. 901-904

  3. Scanning tunneling spectroscopy study of erbium doped GaSb crystals

    Journal of Applied Physics, Vol. 86, Núm. 3, pp. 1449-1451

1998

  1. Decoration of extended defects in GaSb by A1 doping as evidenced by cathodoluminescence studies

    Solid State Communications, Vol. 108, Núm. 12, pp. 997-1000

  2. Effect of erbium doping on the defect structure of GaSb crystals

    Semiconductor Science and Technology, Vol. 13, Núm. 12, pp. 1431-1433

  3. Effect of erbium on the luminescence properties of GaSb crystals

    Solid State Phenomena, Vol. 63-64, pp. 215-220