PEDRO
HIDALGO ALCALDE
Profesor titular de universidad
Universidad Autónoma de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Autónoma de Madrid (24)
2018
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Correlative Study of Vibrational and Luminescence Properties of Zn2GeO4 Microrods
Physica Status Solidi (A) Applications and Materials Science, Vol. 215, Núm. 19
2014
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In-situ scanning electron microscopy and atomic force microscopy Young's modulus determination of indium oxide microrods for micromechanical resonator applications
Applied Physics Letters, Vol. 104, Núm. 16
2011
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Study of the effects of edge morphology on detector performance by leakage current and cathodoluminescence
IEEE Transactions on Nuclear Science
2010
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Development of CdZnTe doped with Bi for gamma radiation detection
CrystEngComm, Vol. 12, Núm. 2, pp. 507-510
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Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses
Journal of Applied Physics, Vol. 107, Núm. 9
2009
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Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Journal of Crystal Growth, Vol. 311, Núm. 5, pp. 1264-1267
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Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Journal of Applied Physics, Vol. 106, Núm. 4
2008
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Cathodoluminescence study of CdTe crystals doped with Bi and Bi:Yb
Journal of Materials Science, Vol. 43, Núm. 16, pp. 5605-5608
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Growth and characterization of CdTe:Ge:Yb
Journal of Crystal Growth, Vol. 310, Núm. 7-9, pp. 2076-2079
2007
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Surface characterisation and cathodoluminescent response of nanodot-patterned GaSb surfaces by low energy ion sputtering
Journal of Physics: Conference Series, Vol. 61, Núm. 1, pp. 942-948
2005
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Cathodoluminescence study of ytterbium doped GaSb
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 121, Núm. 1-2, pp. 108-111
2002
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Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals
Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13211-13215
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Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
Journal of Crystal Growth, Vol. 241, Núm. 3, pp. 283-288
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Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2001
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Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 81, Núm. 1-3, pp. 157-160
2000
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Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 71, Núm. 1-3, pp. 282-287
1999
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Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
Journal of Crystal Growth, Vol. 198-199, Núm. PART I, pp. 379-383
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Effect of In doping in GaSb crystals studied by cathodoluminescence
Semiconductor Science and Technology, Vol. 14, Núm. 10, pp. 901-904
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Scanning tunneling spectroscopy of transition-metal-doped gasb
Physical Review B - Condensed Matter and Materials Physics, Vol. 60, Núm. 15, pp. 10613-10615
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Scanning tunneling spectroscopy study of erbium doped GaSb crystals
Journal of Applied Physics, Vol. 86, Núm. 3, pp. 1449-1451