Publicacións nas que colabora con Ernesto Diéguez (42)

2011

  1. Study of the effects of edge morphology on detector performance by leakage current and cathodoluminescence

    IEEE Transactions on Nuclear Science

2010

  1. Development of CdZnTe doped with Bi for gamma radiation detection

    CrystEngComm, Vol. 12, Núm. 2, pp. 507-510

2009

  1. Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals

    Journal of Crystal Growth, Vol. 311, Núm. 5, pp. 1264-1267

2008

  1. Cathodoluminescence study of CdTe crystals doped with Bi and Bi:Yb

    Journal of Materials Science, Vol. 43, Núm. 16, pp. 5605-5608

  2. Growth and characterization of CdTe:Ge:Yb

    Journal of Crystal Growth, Vol. 310, Núm. 7-9, pp. 2076-2079

2007

  1. Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals

    Journal of Physics D: Applied Physics

  2. Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys

    AIP Conference Proceedings

2006

  1. Characterization of undoped and Te-doped GaSb crystals grown by the vertical feeding method

    Journal of Crystal Growth, Vol. 289, Núm. 1, pp. 18-23

  2. Solidification features of cast and vertically fed Te-doped GaSb materials

    Journal of Crystal Growth, Vol. 293, Núm. 2, pp. 285-290

2005

  1. Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

    Journal of Applied Physics, Vol. 97, Núm. 2

  2. Cathodoluminescence study of ytterbium doped GaSb

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 121, Núm. 1-2, pp. 108-111

  3. Study of defects in InxGa1-xSb bulk crystals

    Physica Status Solidi C: Conferences

2004

  1. Cathodoluminescence characterization of InGaSb crystals

    Proceedings of the International Conference on Microelectronics

  2. Cathodoluminescence study of InxGa1-xSb crystals grown by the Bridgman method

    Journal of Crystal Growth, Vol. 268, Núm. 1-2, pp. 52-58

2002

  1. Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals

    Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13211-13215

  2. Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

    Journal of Crystal Growth, Vol. 241, Núm. 3, pp. 283-288

  3. Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2001

  1. Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 81, Núm. 1-3, pp. 157-160

2000

  1. Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 71, Núm. 1-3, pp. 282-287

1999

  1. Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

    Journal of Crystal Growth, Vol. 198-199, Núm. PART I, pp. 379-383