Publicaciones en las que colabora con José Luis Plaza Canga-Argüelles (9)

2002

  1. Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals

    Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13211-13215

  2. Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

    Journal of Crystal Growth, Vol. 241, Núm. 3, pp. 283-288

  3. Study of the defect structure, compositional and electrical properties of Er2O3-doped n-type GaSb:Te crystals grown by the vertical Bridgman technique

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2001

  1. Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 81, Núm. 1-3, pp. 157-160

2000

  1. Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 71, Núm. 1-3, pp. 282-287

1999

  1. Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

    Journal of Crystal Growth, Vol. 198-199, Núm. PART I, pp. 379-383

  2. Scanning tunneling spectroscopy study of erbium doped GaSb crystals

    Journal of Applied Physics, Vol. 86, Núm. 3, pp. 1449-1451

1998

  1. Effect of erbium doping on the defect structure of GaSb crystals

    Semiconductor Science and Technology, Vol. 13, Núm. 12, pp. 1431-1433

  2. Effect of erbium on the luminescence properties of GaSb crystals

    Solid State Phenomena, Vol. 63-64, pp. 215-220