1988

1. Influence of vacancy defects on the luminescence of GaP studied by CL and positrons

   Solid State Communications, Vol. 67, Núm. 6, pp. 665-667

2. Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence

   Journal of Applied Physics, Vol. 64, Núm. 9, pp. 4466-4468

3. Spatial distribution of vacancy defects in GaP wafers

   Journal of Applied Physics, Vol. 63, Núm. 8, pp. 2583-2585