Publicaciones en las que colabora con Enrique Calleja Pardo (7)

2007

  1. Crystal damage assessment of Be+-implanted GaN by UV Raman scattering

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73

2006

  1. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  2. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4

2005

  1. Effect of the implantation temperature on lattice damage of Be +-implanted GaN

    Semiconductor Science and Technology, Vol. 20, Núm. 5, pp. 374-377

  2. Raman-scattering study of the InGaN alloy over the whole composition range

    Journal of Applied Physics, Vol. 98, Núm. 1

2004

  1. Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

    Applied Physics Letters, Vol. 84, Núm. 6, pp. 897-899

2003

  1. Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

    Materials Research Society Symposium - Proceedings