Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN surfaces: An angle-resolved X-ray photoelectron spectroscopy study
- Arranz, A.
- Palacio, C.
- García-Fresnadillo, D.
- Orellana, G.
- Navarro, A.
- Muñoz, E.
ISSN: 0743-7463
Argitalpen urtea: 2008
Alea: 24
Zenbakia: 16
Orrialdeak: 8667-8671
Mota: Artikulua