Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN surfaces: An angle-resolved X-ray photoelectron spectroscopy study
- Arranz, A.
- Palacio, C.
- García-Fresnadillo, D.
- Orellana, G.
- Navarro, A.
- Muñoz, E.
ISSN: 0743-7463
Ano de publicación: 2008
Volume: 24
Número: 16
Páxinas: 8667-8671
Tipo: Artigo