Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

  1. Martin, R.W.
  2. Rading, D.
  3. Kersting, R.
  4. Tallarek, E.
  5. Nogales, E.
  6. Amabile, D.
  7. Wang, K.
  8. Katchkanov, V.
  9. Trager-Cowan, C.
  10. O'Donnell, K.P.
  11. Watson, I.M.
  12. Matias, V.
  13. Vantomme, A.
  14. Lorenz, K.
  15. Alves, E.
Revue:
Physica Status Solidi (C) Current Topics in Solid State Physics

ISSN: 1862-6351

Année de publication: 2006

Volumen: 3

Pages: 1927-1930

Type: Communication dans un congrès

DOI: 10.1002/PSSC.200565411 GOOGLE SCHOLAR