Epitaxial n++-InGaAs ultra-shallow junctions for highly scaled n-MOS devices
- Tejedor, P.
- Drescher, M.
- Vázquez, L.
- Wilde, L.
Aldizkaria:
Applied Surface Science
ISSN: 0169-4332
Argitalpen urtea: 2019
Alea: 496
Mota: Artikulua