High pressure sputtering as a viable technique for future high permittivity dielectric on III-V integration: GdOx on InP demonstration

  1. Pampillón, M.A.
  2. Cañadilla, C.
  3. Feijoo, P.C.
  4. San Andrés, E.
  5. Del Prado, A.
Revista:
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Any de publicació: 2013

Volum: 31

Número: 1

Tipus: Article

DOI: 10.1116/1.4771970 GOOGLE SCHOLAR

Objectius de Desenvolupament Sostenible

Font de les dades: Scopus