Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

  1. Castán, H.
  2. Dueñas, S.
  3. Barbolla, J.
  4. Del Prado, Á.
  5. Mártil, I.
  6. González-Díaz, G.
Revista:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

ISSN: 0021-4922

Año de publicación: 2003

Volumen: 42

Número: 8

Páginas: 4978-4981

Tipo: Artículo