The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

  1. Pastor, D.
  2. Cuscó, R.
  3. Artús, L.
  4. González-Díaz, G.
  5. Iborra, E.
  6. Jiménez, J.
  7. Peiró, F.
  8. Calleja, E.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2006

Volume: 100

Issue: 4

Type: Article

DOI: 10.1063/1.2259817 GOOGLE SCHOLAR