Effect of the implantation temperature on lattice damage of Be +-implanted GaN

  1. Pastor, D.
  2. Cuscó, R.
  3. Artús, L.
  4. González-Díaz, G.
  5. Fernández, S.
  6. Calleja, E.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2005

Volumen: 20

Número: 5

Pages: 374-377

Type: Article

DOI: 10.1088/0268-1242/20/5/009 GOOGLE SCHOLAR
La source de données: Scopus