Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

  1. Hernández, S.
  2. Blanco, N.
  3. Mártil, I.
  4. González-Díaz, G.
  5. Cuscó, R.
  6. Artús, L.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 2003

Volume: 93

Issue: 11

Pages: 9019-9023

Type: Article

DOI: 10.1063/1.1565175 GOOGLE SCHOLAR
Data source: Scopus