DC characterization of fully ion-implanted p-n junctions into semi-insulating InP

  1. Martin, J.M.
  2. Sanchez, S.G.
  3. Martil, I.
  4. Gonzalez-Diaz, G.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 1996

Volumen: 43

Número: 3

Pages: 396-401

Type: Article

DOI: 10.1109/16.485652 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible

La source de données: Scopus