Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

  1. Pampillón, M.A.
  2. Feijoo, P.C.
  3. San Andrés, E.
  4. García, H.
  5. Castán, H.
  6. Dueñas, S.
Aldizkaria:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Argitalpen urtea: 2015

Alea: 30

Zenbakia: 3

Mota: Artikulua

DOI: 10.1088/0268-1242/30/3/035023 GOOGLE SCHOLAR
Datuen iturria: Scopus