Impact of the bitcell topology on the multiple-cell upsets observed in VLSI nanoscale SRAMs

  1. Clemente, J.A.
  2. Hubert, G.
  3. Rezaei, M.
  4. Franco, F.J.
  5. Mecha, H.
Revue:
IEEE Transactions on Nuclear Science

ISSN: 1558-1578 0018-9499

Année de publication: 2021

Volumen: 68

Número: 9

Pages: 2383-2391

Type: Article

DOI: 10.1109/TNS.2021.3099202 GOOGLE SCHOLAR

Objectifs de Développement Durable