Publicaciones en las que colabora con FRANCISCO DOMÍNGUEZ-ADAME ACOSTA (34)

2023

  1. Erratum: Correction: Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping (Nanoscale (2022) 14 19 (7151-7162))

    Nanoscale

  2. The fundamental properties of energy-technology-related nanomaterials

    Sustainable Nanomaterials for Energy Applications (Institute of Physics Publishing), pp. 3

2022

  1. Persistence of symmetry-protected Dirac points at the surface of the topological crystalline insulator SnTe upon impurity doping

    Nanoscale

2020

  1. Understanding the UV luminescence of zinc germanate: The role of native defects

    Acta Materialia, Vol. 196, pp. 626-634

2019

  1. Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

    Scientific reports, Vol. 9, Núm. 1, pp. 13572

1995

  1. Fibonacci superlattices of narrow-gap III-V semiconductors

    Semiconductor Science and Technology, Vol. 10, Núm. 6, pp. 797-802

1994

  1. A relativistic equation for a slowly varying potential

    Journal of Physics A: General Physics, Vol. 27, Núm. 10, pp. 3539-3546

  2. Electronic structure of Fibonacci Si δ-doped GaAs

    Physics Letters A, Vol. 194, Núm. 3, pp. 184-190

  3. Electronic structure of Si delta -doped GaAs in an electric field

    Semiconductor Science and Technology, Vol. 9, Núm. 3, pp. 263-271

  4. Exact Solutions of Two‐Band Models of Graded‐Gap Superlattices

    physica status solidi (b), Vol. 184, Núm. 2, pp. K53-K56

  5. Exciton trapping in one-dimensional systems with correlated disorder

    Physical Review B, Vol. 49, Núm. 6, pp. 3839-3843

  6. Sawtooth superlattices in a two-band semiconductor

    Semiconductor Science and Technology, Vol. 9, Núm. 7, pp. 1358-1362

  7. Stark ladders in periodically Si-δ-doped GaAs

    Physical Review B, Vol. 49, Núm. 16, pp. 11471-11474

1993

  1. A transfer matrix method for the determination of one-dimensional band structures

    Journal of Physics A: General Physics, Vol. 26, Núm. 1, pp. 171-177

  2. Cathodoluminescence and microRaman analysis of oxygen loss in electron irradiated YBa2Cu3O7-x

    Journal of Applied Physics, Vol. 74, Núm. 10, pp. 6289-6292

  3. Photoluminescence Studies of Heat-Treated GaP:S Samples

    Journal of the Electrochemical Society, Vol. 140, Núm. 12, pp. 3627-3630

  4. Scanning electron acoustic microscopy of Bi2Sr2CaCu2Ox

    Solid State Communications, Vol. 87, Núm. 9, pp. 843-845

  5. Spatial distribution of Mn-related emission in GaP studied by cathodoluminescence and photoluminescence

    Materials Chemistry and Physics, Vol. 35, Núm. 2, pp. 126-128

  6. Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence

    Journal of Applied Physics, Vol. 74, Núm. 9, pp. 5726-5728

1992

  1. Level shift under the influence of relativistic point interaction potentials

    Journal of Physics A: General Physics, Vol. 25, Núm. 7, pp. 2065-2070